Curve evolution models for real-time identification with application to plasma etching

被引:3
作者
Berg, J [1 ]
Yezzi, A
Tannenbaum, A
机构
[1] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA
[2] Univ Minnesota, Dept Elect Engn, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
curve evolution; level set methods; parameter estimation; plasma etching; process modeling; semiconductor manufacturing;
D O I
10.1109/9.739081
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
It is desirable, in constructing an algorithm for real-time control or identification of free surfaces, to avoid representations of the surface requiring mesh refinement at corners or special logic for topological transitions. Level set methods provide a promising framework for such algorithms. In this paper we present: 1) A mathematical representation of free surface motion that is particularly well-suited to real-time implementation; 2) a technique for estimating an isotropic and homogeneous normal velocity based on a simple measurement; and 3) an application to a semiconductor etching problem.
引用
收藏
页码:99 / 102
页数:4
相关论文
共 13 条
[1]  
BERG JM, 1997, 1454 IMA
[2]   DEVELOPMENT OF TECHNIQUES FOR REAL-TIME MONITORING AND CONTROL IN PLASMA-ETCHING .2. MULTIVARIABLE CONTROL-SYSTEM ANALYSIS OF MANIPULATED, MEASURED, AND PERFORMANCE VARIABLES [J].
BUTLER, SW ;
MCLAUGHLIN, KJ ;
EDGAR, TF ;
TRACHTENBERG, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) :2727-2735
[3]  
do Carmo M., 2016, Differential Geometry of Curves and Surfaces, Vsecond
[4]   THE APPLICATION OF THE HUYGENS PRINCIPLE TO SURFACE EVOLUTION IN INHOMOGENEOUS, ANISOTROPIC AND TIME-DEPENDENT SYSTEMS [J].
KATARDJIEV, IV ;
CARTER, G ;
NOBES, MJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1989, 22 (12) :1813-1824
[5]   ON THE EVOLUTION OF CURVES VIA A FUNCTION OF CURVATURE .1. THE CLASSICAL CASE [J].
KIMIA, BB ;
TANNENBAUM, A ;
ZUCKER, SW .
JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS, 1992, 163 (02) :438-458
[6]   CONTROL OF SEMICONDUCTOR MANUFACTURING EQUIPMENT - REAL-TIME FEEDBACK-CONTROL OF A REACTIVE ION ETCHER [J].
RASHAP, BA ;
ELTA, ME ;
ETEMAD, H ;
FOURNIER, JP ;
FREUDENBERG, JS ;
GILES, MD ;
GRIZZLE, JW ;
KABAMBA, PT ;
KHARGONEKAR, PP ;
LAFORTUNE, S ;
MOYNE, JR ;
TENEKETZIS, D ;
TERRY, FL .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1995, 8 (03) :286-297
[7]  
Sethian J.A., 1996, Level Set Methods: Evolving Interfaces in Computational Geometry, Fluid Mechanics, Computer Vision, and Materials Science
[8]   A fast marching level set method for monotonically advancing fronts [J].
Sethian, JA .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1996, 93 (04) :1591-1595
[9]   An overview of level set methods for etching, deposition, and lithography development [J].
Sethian, JA ;
Adalsteinsson, D .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1997, 10 (01) :167-184
[10]   SIMULATION OF REACTIVE ION ETCHING PATTERN TRANSFER [J].
SHAQFEH, ESG ;
JURGENSEN, CW .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) :4664-4675