Activated strain relief of Ge/Si(100) islands

被引：12

作者：

Drucker, J ^{[1
]}

Zhang, YT

Chaparro, SA

Chandrasekhar, D

McCartney, MR

Smith, DJ

机构：

[1] Univ Texas, Dept Phys, El Paso, TX 79968 USA

[2] Univ Texas, Mat Res Inst, El Paso, TX 79968 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

SURFACE REVIEW AND LETTERS | 2000年 / 7卷 / 5-6期

关键词：

D O I：

10.1016/S0218-625X(00)00053-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature, T. Si interdiffusion for T greater than or equal to 550 degreesC forms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation for T greater than or equal to 600 degreesC.

引用

页码：527 / 531

页数：5

共 20 条

[1]

Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920

[2] THE EQUILIBRIUM OF CRYSTAL SURFACES [J].