Self-limiting growth of strained faceted islands

被引：157

作者：

Jesson, DE ^{[1
]}

Chen, G ^{[1
]}

Chen, KM ^{[1
]}

Pennycook, SJ ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.80.5156

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We consider the growth of facets associated with coherently strained semiconductor islands. Surprisingly, the island growth rate is found to rapidly self-limit, which has important consequences for island size distributions. A new explanation for the elongation of strained faceted islands is proposed as a natural consequence of facet growth kinetics.

引用

页码：5156 / 5159

页数：4

共 33 条

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