Characteristics of Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes

被引：2

作者：

Chandra, GH ^{[1
]}

Hussain, OM ^{[1
]}

Uthanna, S ^{[1
]}

Naidu, BS ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

来源：

PHYSICA SCRIPTA | 2001年 / 63卷 / 05期

关键词：

D O I：

10.1238/Physica.Regular.063a00422

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes have been prepared. The current-voltage. capacitance-voltage and photoresponse have been investigated. Various important physical parameters of these diodes were derived from these measurements.

引用

页码：422 / 424

页数：3

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