Hole and electron mobility enhancement in strained SiGe vertical MOSFETs

被引：18

作者：

Chen, XD ^{[1
]}

Liu, KC ^{[1
]}

Ouyang, QC ^{[1
]}

Jayanarayanan, SK ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

基金：

美国国家科学基金会;

关键词：

bandgap engineering; electron and hole mobility enhancement; vertical MOSFET;

D O I：

10.1109/16.944185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated strained SiGe vertical P-channel and N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) by Ge ion implantation and solid phase epitaxy. No Si cap is needed in this process because Ge is implanted after gate oxide growth. The vertical MOSFETs are fabricated with a channel length below 0.2 mum without sophisticated lithography and the whole process is compatible with a regular CMOS process. The enhancement for the hole and electron mobilities in the direction normal to the growth plane of strained SiGe over that of bulk Si has been demonstrated in this vertical MOSFET device structure for the first time. The drain current for the vertical SiGe PMOSFETs has been found to be enhanced by as much as 100% over the Si control devices and the drain current for the vertical SiGe NMOSFETs has been enhanced by 50% compared with the Si control devices on the same wafer. The electron mobility enhancement in the normal direction is not as significant as that for holes, which is in agreement with theoretical predictions.

引用

页码：1975 / 1980

页数：6

共 24 条

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