Low- and high-field electron-transport parameters for unstrained and strained Si1-xGex

被引：38

作者：

Bufler, FM

Graf, P

Meinerzhagen, B

Adeline, B

Rieger, MM

Kibbel, H

Fischer, G

机构：

[1] STERIA,F-78140 VELIZY VILLACOUBL,FRANCE

[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

[3] DAIMLER BENZ AG,RES CTR ULM,D-89013 ULM,GERMANY

[4] INST HALBLEITERPHYS,D-15204 FRANKFURT,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 06期

关键词：

D O I：

10.1109/55.585350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si1-xGex alloys up to x = 0.3. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si1-xGex samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations, There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 10(19) cm(-3) and growing x. In contrast, the saturation-drift velocity is strongly reduced with x.

引用

页码：264 / 266

页数：3

共 17 条

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Busch G., 1960, HELV PHYS ACTA, V33, P437

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J].