Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems

被引：69

作者：

Flandre, D

Adriaensen, S

Akheyar, A

Crahay, A

Demeûs, L

Delatte, P

Dessard, V

Iniguez, B

Nève, A

Katschmarskyj, B

Loumaye, P

Laconte, J

Martinez, I

Picun, G

Rauly, E

Renaux, C

Spôte, D

Zitout, M

Dehan, M

Parvais, B

Simon, P

Vanhoenacker, D

Raskin, JP

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] Univ Catholique Louvain, Lab Hyperfrequences, B-1348 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 04期

关键词：

silicon-on-insulator; micropower; high-temperature; RF; microsystems; double-gate;

D O I：

10.1016/S0038-1101(01)00084-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：541 / 549

页数：9

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