Electron paramagnetic resonance studies of silicon-related defects in diamond

被引：88

作者：

Edmonds, A. M. ^{[1
]}

Newton, M. E. ^{[1
]}

Martineau, P. M. ^{[2
]}

Twitchen, D. J. ^{[3
]}

Williams, S. D. ^{[3
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] DTC Res Ctr, Maidenhead SL6 6JW, Berks, England

[3] Element Six Ltd, Ascot SL5 8BP, Berks, England

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.77.245205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The (29)Si hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D(3d) symmetry) defect (V-Si-V)(0), while KUL3 is shown to be (V-Si-V)(0) decorated with a hydrogen atom, (V-Si-V:H)(0).

引用

页数：11

共 44 条

[1] ON THE HYPERFINE STRUCTURE OF PARAMAGNETIC RESONANCE - THE S-ELECTRON EFFECT [J].

ABRAGAM, A ;

HOROWITZ, J ;

PRYCE, MHL .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1955, 230 (1181) :169-187

[2] Silicon incorporation in CVD diamond layers [J].

Barjon, J ;

Rzepka, E ;

Jomard, F ;

Laroche, JM ;

Ballutaud, D ;

Kociniewski, T ;

Chevallier, J .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (11) :2177-2181

[3] SITE SYMMETRY ANALYSIS OF THE 738 NM DEFECT IN DIAMOND [J].

BROWN, SW ;

RAND, SC .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4069-4075

[4] DISPERSED PARAMAGNETIC NITROGEN CONTENT OF LARGE LABORATORY DIAMONDS [J].

CHRENKO, RM ;

STRONG, HM ;

TUFT, RE .

PHILOSOPHICAL MAGAZINE, 1971, 23 (182) :313-&

[5] THE 1.681 EV CENTER IN POLYCRYSTALLINE DIAMOND [J].

CLARK, CD ;

DICKERSON, CB .

SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3) :336-343

[6] SILICON DEFECTS IN DIAMOND [J].

CLARK, CD ;

KANDA, H ;

KIFLAWI, I ;

SITTAS, G .

PHYSICAL REVIEW B, 1995, 51 (23) :16681-16688

[7]

Collins A.T, 1994, PROPERTIES GROWTH DI, P288

[8] A SPECTROSCOPIC STUDY OF OPTICAL-CENTERS IN DIAMOND GROWN BY MICROWAVE-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].

COLLINS, AT ;

KAMO, M ;

SATO, Y .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) :2507-2514

[9] THE ANNEALING OF RADIATION-DAMAGE IN DEBEERS COLORLESS CVD DIAMOND [J].

COLLINS, AT ;

ALLERS, L ;

WORT, CJH ;

SCARSBROOK, GA .

[10] THE JAHN-TELLER EFFECT AND VIBRONIC COUPLING AT DEEP LEVELS IN DIAMOND [J].

DAVIES, G .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (07) :787-830

← 1 2 3 4 5 →