Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots -: art. no. 233306

被引：58

作者：

Cortez, S

Krebs, O

Voisin, P

Gérard, JM

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France

[2] Lab Concepts & Dispositifs Photon, F-92220 Bagneux, France

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.63.233306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with a focus on the heavy-hole versus light-hole character of valence states.

引用

收藏

页数：4

相关论文

共 22 条

[1] Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots [J].

Bayer, M ;

Kuther, A ;

Forchel, A ;

Gorbunov, A ;

Timofeev, VB ;

Schäfer, F ;

Reithmaier, JP ;

Reinecke, TL ;

Walck, SN .

PHYSICAL REVIEW LETTERS, 1999, 82 (08) :1748-1751

[2] Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2247-2249

[3] In-plane optical anisotropy of quantum well structures: From fundamental considerations to interface characterization and optoelectronic engineering [J].

Cortez, S ;

Krebs, O ;

Voisin, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04) :2232-2241

[4] Multiexciton spectroscopy of a single self-assembled quantum dot [J].

Dekel, E ;

Gershoni, D ;

Ehrenfreund, E ;

Spektor, D ;

Garcia, JM ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 1998, 80 (22) :4991-4994

[5] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Parnell, SR ;

Finley, JJ ;

Wilson, LR ;

Schumacher, KL ;

Mowbray, DJ ;

Skolnick, MS ;

Al-Khafaji, M ;

Cullis, AG ;

Hopkinson, M ;

Clark, JC ;

Hill, G .

PHYSICAL REVIEW B, 2000, 62 (24) :16784-16791

[6] Fine structure splitting in the optical spectra of single GaAs quantum dots [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008

[7] Strong electron-phonon coupling regime in quantum dots:: Evidence for everlasting resonant polarons [J].

Hameau, S ;

Guldner, Y ;

Verzelen, O ;

Ferreira, R ;

Bastard, G ;

Zeman, J ;

Lemaître, A ;

Gérard, JM .

PHYSICAL REVIEW LETTERS, 1999, 83 (20) :4152-4155

[8] Optical anisotropy in arrow-shaped InAs quantum dots [J].

Henini, M ;

Sanguinetti, S ;

Fortina, SC ;

Grilli, E ;

Guzzi, M ;

Panzarini, G ;

Andreani, LC ;

Upward, MD ;

Moriarty, P ;

Beton, PH ;

Eaves, L .

PHYSICAL REVIEW B, 1998, 57 (12) :R6815-R6818

[9] Modal gain and internal optical mode loss of a quantum dot laser [J].

Herrmann, E ;

Smowton, PM ;

Summers, HD ;

Thomson, JD ;

Hopkinson, M .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :163-165

[10] Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses [J].

Ignatiev, IV ;

Kozin, IE ;

Nair, SV ;

Ren, HW ;

Sugou, S ;

Masumoto, Y .

PHYSICAL REVIEW B, 2000, 61 (23) :15633-15636