Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface

被引：35

作者：

De Padova, P

Quaresima, C

Perfetti, P

Larciprete, R

Brochier, R

Richter, C

Ilakovac, V

Bencok, P

Teodorescu, C

Aristov, VY

Johnson, RL

Hricovini, K

机构：

[1] CNR, ISM, I-00133 Rome, Italy

[2] Univ Cergy Pontoise, LMPS, F-95031 Cergy, France

[3] ENEA, Dip INNIFIS, I-00044 Frascati, RM, Italy

[4] Sincrotrone Trieste, I-34012 Basovizza, TS, Italy

[5] LURE, F-91898 Orsay, France

[6] Russian Acad Sci, Moscow, Russia

[7] Univ Hamburg, Inst Phys Expt, D-22671 Hamburg, Germany

来源：

SURFACE SCIENCE | 2001年 / 482卷

关键词：

indium arsenide; low energy electron diffraction (LEED); scanning tunneling microscopy; electron emission;

D O I：

10.1016/S0039-6028(01)00927-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface by LEED, STM and high-resolution core-level and valence band (VB) spectroscopies. The In4d and As3d core levels showed the presence of chemically shifted components. The decomposition of In4d core level exhibited a new surface component located close to that of free indium, metal. This indicates that the origin of the electron emission at the Fermi level measured in the VB spectra is probably due to the free In charge, STM measurements showed a uniform distribution of charge on the In-rows. which are highly ordered over large areas of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：587 / 592

页数：6

共 20 条

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