Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots

被引：19

作者：

Moskalenko, ES

Karlsson, FK

Donchev, VT

Holtz, PO ^{[1
]}

Monemar, B

Schoenfeld, WV

Petroff, PM

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 11期

关键词：

D O I：

10.1021/nl050926a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains.

引用

页码：2117 / 2122

页数：6

共 24 条

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