Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructures

被引：58

作者：

Walter, G ^{[1
]}

Holonyak, N

Ryou, JH

Dupuis, RD

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Ctr Cpds Semicond Microelect, Urbana, IL 61801 USA

[3] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1405153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating continuous 300 K photopumped InP quantum dot (QD) laser operation (656-679 nm) realized by modifying and coupling, via tunneling, an auxiliary InGaP quantum well (QW) to the QDs of an InP-In(AlGa)P-InAlP heterostructure grown by metalorganic chemical vapor deposition. The In0.49Ga0.51P QW coupled to the InP QDs by a thin (less than or similar to 20 Angstrom) In0.5Al0.3Ga0.2P barrier overcomes the limitations of carrier collection, lateral transport, and thermalization in the QDs, thus yielding a different form of QD laser. (C) 2001 American Institute of Physics.

引用

页码：1956 / 1958

页数：3

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