Stacking-fault nucleation on Ir(111) -: art. no. 056103

被引：49

作者：

Busse, C ^{[1
]}

Polop, C

Müller, M

Albe, K

Linke, U

Michely, T

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

[2] Tech Univ Darmstadt, Fachbereich Mat & Geowissensch, D-64289 Darmstadt, Germany

[3] Forschungszentrum Julich, ISG 3, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.91.056103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of adatoms to small mobile adatom clusters which occupy in thermal equilibrium the hcp sites with a significant probability. Using parameters derived independently by field ion microscopy, the model accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.

引用

页数：4

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