Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper

被引:6
作者
Lee, SY
Rha, SK
Lee, WJ
Kim, DW
Hwang, JS
Park, CO
机构
[1] LG SEMICON CO LTD,ADV TECHNOL LAB,CHEONGJU 360480,SOUTH KOREA
[2] KYONGGI UNIV,DEPT MAT SCI & ENGN,SUWON 440760,SOUTH KOREA
[3] TAEJON UNIV,DEPT CHEM,TAEJON 300716,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 08期
关键词
copper; chemical vapor deposition (CVD); metalorganic precursor; copper (I) hexafluoroacetylacetonate trimethylvinylsilane [Cu(hfac)(TMVS); partial pressure; deposition rate; nucleation; resistivity; step coverage;
D O I
10.1143/JJAP.36.5249
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of the partial pressure of precursor on the metalorganic chemical vapor deposition of copper were investigated. Copper was deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane as a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure warm-wall chemical vapor deposition reactor. The deposition rate of copper film was a constant Value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure lower than 0.048 Torr. The incubation time for copper nucleation decreased with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 mu Omega.cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr, copper did not nucleate inside the trench so that the step coverage of copper him became very poor.
引用
收藏
页码:5249 / 5252
页数:4
相关论文
共 19 条
[1]   CARRIER-GAS EFFECTS ON CHARACTERISTICS OF COPPER CHEMICAL-VAPOR-DEPOSITION USING HEXAFLUORO-ACETYLACETONATE-COPPER(1) TRIMETHYLVINYLSILANE [J].
AWAYA, N ;
ARITA, Y .
THIN SOLID FILMS, 1995, 262 (1-2) :12-19
[2]  
Awaya N., 1992, Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference, P345
[3]  
BER JR, 1995, ADV MTALLIZATION ULS, P133
[4]   CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR IC METALLIZATION - PRECURSOR CHEMISTRY AND MOLECULAR-STRUCTURE [J].
DOPPELT, P ;
BAUM, TH .
MRS BULLETIN, 1994, 19 (08) :41-48
[5]   STRESS-INDUCED GRAIN-BOUNDARY FRACTURES IN AL-SI INTERCONNECTS [J].
HINODE, K ;
OWADA, N ;
NISHIDA, T ;
MUKAI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :518-522
[6]   POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR [J].
HITCHMAN, ML ;
KANE, J ;
WIDMER, AE .
THIN SOLID FILMS, 1979, 59 (02) :231-247
[7]   THERMAL-STABILITY OF INTERCONNECT OF TIN/CU/TIN MULTILAYERED STRUCTURE [J].
IGARASHI, Y ;
YAMANOBE, T ;
YAMAJI, T ;
NISHIKAWA, S ;
ITO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :462-465
[8]   CHEMICAL-VAPOR DEPOSITION OF COPPER FROM HEXAFLUOROACETYLACETONATO COPPER(I) VINYLTRIMETHYLSILANE - DEPOSITION RATES, MECHANISM, SELECTIVITY, MORPHOLOGY, AND RESISTIVITY AS A FUNCTION OF TEMPERATURE AND PRESSURE [J].
JAIN, A ;
CHI, KM ;
KODAS, TT ;
HAMPDENSMITH, MJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) :1434-1439
[9]  
KRISHNAN A, 1992, P 9 INT VLSI MULT IN, P226
[10]   ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF COPPER THIN-FILMS .1. HORIZONTAL HOT WALL REACTOR [J].
LAI, WG ;
XIE, Y ;
GRIFFIN, GL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3499-3504