An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors

被引:15
作者
Kawasaki, Naoko [1 ]
Ohta, Yohei [1 ]
Kubozono, Yoshihiro [1 ]
Konishi, Atsushi [2 ]
Fujiwara, Akihiko [2 ]
机构
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Japan Adv Inst Sci & Technol, Tokyo, Ishikawa 9231292, Japan
关键词
D O I
10.1063/1.2908886
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dissolution of metal clusters in metal island films by the simultaneous application of electric field and temperature is reported. The consequent fading of surface plasmon resonance greatly modifies the optical properties of the samples. The dissolution process is verified in island films of different metals, obtained under different conditions and covered by different dielectric materials, as well as on multilayer dielectric stacks showing interferential properties. The tailoring possibilities of the optical behavior of metal island films combined with the inexpensive technical requirements of this approach open up the possibility to produce low-cost photonic heterostructures. (c) 2008 American Institute of Physics.
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页数:3
相关论文
共 21 条
[1]  
[Anonymous], 2002, Semiconductor Devices, Physics and Technology
[2]   Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors [J].
Calhoun, M. F. ;
Hsieh, C. ;
Podzorov, V. .
PHYSICAL REVIEW LETTERS, 2007, 98 (09)
[3]   Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Ewbank, PC ;
da Silva, DA ;
Brédas, JL ;
Miller, LL ;
Mann, KR ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292
[4]  
COLINGE P, 2002, PHYS SEMICONDUCTOR D
[5]   Space charge limited transport and time of flight measurements in tetracene single crystals: A comparative study [J].
de Boer, RWI ;
Jochemsen, M ;
Klapwijk, TM ;
Morpurgo, AF ;
Niemax, J ;
Tripathi, AK ;
Pflaum, J .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1196-1202
[6]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[7]  
2-9
[8]  
DRESSELHAUS S, 1996, SCI FULLERNES CARBON
[9]   Examination of band bending at buckminsterfullerene (C60)/metal interfaces by the Kelvin probe method [J].
Hayashi, N ;
Ishii, H ;
Ouchi, Y ;
Seki, K .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3784-3793
[10]   Defect healing at room temperature in pentacene thin films and improved transistor performance [J].
Kalb, Wolfgang L. ;
Meier, Fabian ;
Mattenberger, Kurt ;
Batlogg, Bertram .
PHYSICAL REVIEW B, 2007, 76 (18)