Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors

被引：78

作者：

Calhoun, M. F. ^{[1
]}

Hsieh, C. ^{[1
]}

Podzorov, V. ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08855 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.98.096402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed us to estimate the average polaron trapping time, tau(tr)=50 +/- 10 ps, and the density of shallow traps, N-0=(3 +/- 0.5)x10(11) cm(-2), in the channel of single-crystal tetracene devices.

引用

页数：4

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