Electrical transport of 2D electrons in non-uniform magnetic fields

被引：7

作者：

Gallagher, BL ^{[1
]}

Kubrak, V

Rushforth, AW

Neumann, AC

Edmonds, KW

Main, PC

Henini, M

Marrows, CH

Hickey, BJ

Thoms, S

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Leeds, Dept Phys, Leeds LS2 9JT, W Yorkshire, England

[3] Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8QQ, Lanark, Scotland

来源：

PHYSICA E | 2001年 / 11卷 / 2-3期

基金：

英国工程与自然科学研究理事会;

关键词：

semiconductors; magnetic materials; magnetoresistance;

D O I：

10.1016/S1386-9477(01)00197-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a review of some of our recent experimental work on hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through magnetic barriers, periodic magnetic modulations, and random magnetic fields. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：171 / 176

页数：6

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