Quantum-dot infrared photodetector with lateral carrier transport

被引：58

作者：

Chu, L ^{[1
]}

Zrenner, A ^{[1
]}

Bichler, M ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 14期

关键词：

D O I：

10.1063/1.1408269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we present a normal-incident quantum-dot infrared photodetector. The detection principle is based on intersubband transition between the p states and the wetting-layer subband in the conduction band of self-assembled In(Ga)As/GaAs quantum dots. Carrier transport takes place in a channel next to the quantum-dot layers. The photoresponse is peaked at lambda =6.65 mum (186 meV) and reaches a maximum value of over 11 A/W at T=30 K with a wavelength resolution of 12%. Detector response time tau is determined to be about 0.8 ms. Temperature and frequency dependence of the detector structure are discussed. (C) 2001 American Institute of Physics.

引用

页码：2249 / 2251

页数：3

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