Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

被引：82

作者：

Chu, L ^{[1
]}

Zrenner, A ^{[1
]}

Böhm, G ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 14期

关键词：

D O I：

10.1063/1.126220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on lateral intersubband photocurrent spectroscopy on self-assembled InAs/GaAs quantum dots in normal incidence. The in-plane polarized intersubband transition between the first exited states and wetting layer in the conduction band is peaked at 180 meV with a spectral linewidth of 20 meV. In-plane polarization dependent measurements show that the energy separation between the (100) and (010) states caused by lateral confinement is about 3.5 meV. A comparison of photoluminescence and vertical and lateral photocurrent experiments leads to a consistent picture of the energy levels in the conduction and valence band. (C) 2000 American Institute of Physics. [S0003-6951(00)03814-6].

引用

页码：1944 / 1946

页数：3

共 17 条

[1] Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Böhm, G ;

Abstreiter, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2355-2362

[2] Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2247-2249

[3] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J].

Chu, L ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (23) :3599-3601

[4] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[5] Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].

Fricke, M ;

Lorke, A ;

Kotthaus, JP ;

MedeirosRibeiro, G ;

Petroff, PM .

EUROPHYSICS LETTERS, 1996, 36 (03) :197-202

[6] INTERSUBBAND ABSORPTION IN THE CONDUCTION-BAND OF SI/SI1-XGEX MULTIPLE QUANTUM-WELLS [J].

HERTLE, H ;

SCHUBERTH, G ;

GORNIK, E ;

ABSTREITER, G ;

SCHAFFLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2977-2979

[7] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures [J].

Lee, SW ;

Hirakawa, K ;

Shimada, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1428-1430

[8]

LEVINE BF, 1993, J APPL PHYS, V74, pR1

[9] DEPENDENCE OF ABSORPTION-SPECTRUM AND RESPONSIVITY ON THE UPPER STATE POSITION IN QUANTUM-WELL INTERSUBBAND PHOTODETECTORS [J].

LIU, HC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :3062-3067

[10] Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors [J].

Maimon, S ;

Finkman, E ;

Bahir, G ;

Schacham, SE ;

Garcia, JM ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2003-2005

← 1 2 →