Assessment of the analytical capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy applied to semiconductor devices

被引：5

作者：

Stangoni, M ^{[1
]}

Ciappa, M ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] ETH, Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1532 / 1537

页数：6

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