Hardness, elastic modulus and structure of indium nitride thin films on AlN-nucleated sapphire substrates

被引:19
作者
Edgar, JH
Wei, CH
Smith, DT
Kistenmacher, TJ
Bryden, WA
机构
[1] NIST, DIV CERAM, GAITHERSBURG, MD 20899 USA
[2] JOHNS HOPKINS UNIV, APPL PHYS LAB, LAUREL, MD 20723 USA
关键词
Sapphire Substrate; Electron Cyclotron Resonance; Reactive Magnetron; Indentation Modulus; Electron Cyclotron Resonance Plasma;
D O I
10.1023/A:1018587306451
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The structural properties of epitaxial indium nitride thin films were characterized and related to the mechanical properties as measured by nanoindentation. The seven epitaxial InN films examined were deposited over the temperature range 200-400 degrees C by reactive magnetron sputtering on (00.1) sapphire substrates buffered with a thin AlN layer. The hardness, surface texture and crystal quality of the InN films were functions of the deposition temperature, with the maximum hardness (11.2 GPa), the smoothest surface, the minimum c-lattice constant (0.5708 nm), and the minimum (00.4) X-ray rocking curve width (0.6 degrees) all occurring at the deposition temperature of 350 degrees C. The crystal quality and the hardness of the InN films degraded at both higher and lower temperatures.
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页码:307 / 312
页数:6
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