MICROHARDNESS OF INDIUM NITRIDE SINGLE-CRYSTAL FILMS

被引：10

作者：

GUO, QX ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI 441,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1A期

关键词：

MICROHARDNESS; THIN FILM; INDIUM NITRIDE; SINGLE CRYSTAL; EPITAXY;

D O I：

10.1143/JJAP.33.90

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium nitride epitaxial layers were grown by microwave-excited metalorganic vapor phase epitaxy. Microhardness of the films was measured. The hardness value has been extracted from the curve of depth of indentation vs the applied load, and determined to be 1000+/-50 kg/mm(2)

引用

页码：90 / 91

页数：2

共 13 条

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