Atomic models of (√3X√3)R30° reconstruction on hexagonal 6H-SiC(0001) surface

被引：7

作者：

Han, Y

Aoyama, T

Ichimiya, A

Hisada, Y

Mukainakano, S

机构：

[1] DENSO Corp, Res Lab, Aichi 4700111, Japan

[2] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 05期

关键词：

D O I：

10.1116/1.1406152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using reflection high-energy electron diffraction (RHEED) and RHEED multislice dynamical calculations, the atomic structures of the (root3 x root3)R30 degrees reconstruction on 6H-SiC(0001) surface were solved. Both the simple adatom structure with a Si coverage of one-third monolayer occupying the threefold-symmetric T-4 or H-3 sites and a bit complex structure with Si trimers centered on the T-4 positions with 1 monolayer coverage are all compatible with our results. (C) 2001 American Vacuum Society.

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页码：1972 / 1975

页数：4

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