GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors

被引：17

作者：

Moto, A ^{[1
]}

Tanaka, S ^{[1
]}

Tanabe, T ^{[1
]}

Takagishi, S ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic Hith Technol Labs, Itami, Hyogo 6640016, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

GaInP/GaAs; GaAs/GaInAs; solar cells; TBAs; TBP;

D O I：

10.1016/S0927-0248(00)00243-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have applied metallorganic chemical vapor deposition (MOCVD) using less toxic group V-precursors to the fabrication of the monolithic dual-junction GaInP/GaAs and mechanically-stacked GaAs/GaInAs cells, targeting for the super-high-efficiency triple-junction GaInP/GaAs/GaInAs solar cells. The dual-junction GaInP/GaAs cell grown on an n-type GaAs substrate, which is suitable for higher optical transmittance to the bottom cell? showed a conversion efficiency of 25.9% at AM 1.5, 1-sun. Combined with an efficiency of 5.1% for GaInAs bottom cell grown on an InP substrate under the mechanically stacked GaAs top cell, it is possible to attain an efficiency of over 30% by the all organometallic-source MOCVD method. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：585 / 592

页数：8

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