B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure

被引：10

作者：

Desrues, T. ^{[1
]}

Ribeyron, P. -J. ^{[1
]}

Vandeneynde, A. ^{[1
]}

Ozanne, A. -S. ^{[1
]}

Souche, F. ^{[1
]}

Munoz, D. ^{[1
]}

Denis, C. ^{[1
]}

Diouf, D. ^{[2
]}

Kleider, J. -P. ^{[2
]}

机构：

[1] INES CEA, 50 Ave Lac Leman,BP 332, F-73370 Le Bourget Du Lac, France

[2] Univ Paris Sud, Univ Paris 06, CNRS, SUPELEC,LGEP,UMR8507, F-91192 Gif Sur Yvette, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | 2010年 / 7卷 / 3-4期

关键词：

JUNCTION;

D O I：

10.1002/pssc.200982766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study reports on the p-type a-Si:H emitter layer of silicon heterojunction (Si-HJ) solar cells and its contacting scheme. The influence of the ratio between p-type a-Si:H emitter width and its contact width is checked on Interdigitated Back Contact (IBC) Si-HJ both experimentally and by 2D modelling. A low emitter contact fraction value is found to be detrimental to the IBC Si-HJ cells efficiency due to distributed series resistance effects. This not only limits the cell fill factor (FF) but also its short circuit current density (Jsc). By increasing the emitter contact fraction an efficiency of 12.7% is obtained on 25 cm(2) IBC Si-HJ solar cells. New B-doped a-Si:H emitter layers and contacts are also developed on inverted Si-HJ cells. Depending on the a-Si:H conductivity, we observe a great impact of the contact material on Si-HJ cells performance. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1011 / 1015

页数：5

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