High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

被引：42

作者：

Makimoto, T ^{[1
]}

Kumakura, K ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1597989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN extrinsic base have been fabricated on SiC substrates. The maximum common-emitter current gain exceeds 2000 at the collector current of 15 mA for a 50 mumx30 mum device. In addition, the offset voltage in the common-emitter current-voltage characteristics was reduced from 5 to 1 V. This indicates that the large offset voltage reported previously was mainly due to the degraded base ohmic characteristics. The regrowth of p-InGaN is effective for improving the characteristics of nitride heterojunction bipolar transistors. (C) 2003 American Institute of Physics.

引用

页码：1035 / 1037

页数：3

High current gain (&gt;2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN