Growth of α-GaPO4 and α-GeO2 single crystals by the flux method

被引：5

作者：

Beaurain, M ^{[1
]}

Armand, P ^{[1
]}

Papet, P ^{[1
]}

机构：

[1] Univ Montpellier 2, LPMC, UMR 5617, F-34095 Montpellier, France

来源：

JOURNAL DE PHYSIQUE IV | 2005年 / 126卷

关键词：

D O I：

10.1051/jp4:2005126005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Colorless and transparent single crystals of the piezoelectric materials alpha-GaPO4 and alpha-GeO2 have been grown by the spontaneous nucleation method from Li2Mo3O10 flux at high temperature. Lattice parameters of the hexagonal-phase crystals have been measured by a single crystal X-ray diffraction method. Results of the infrared measurement have indicated the possibility of growing almost hydroxyl-free alpha-GaPO4 crystals by the flux method. Thermal analyses have pointed out the phase transformation alpha-quartz GaPO4 <-> beta-cristobalite GaPO4.

引用

页码：23 / 26

页数：4

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