Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer

被引：21

作者：

Amy, F

Enriquez, H

Soukiassian, P

Brylinski, C

Mayne, A

Dujardin, G

机构：

[1] CEA, DSM, DRECAM, SPCSI,SIMA, F-91191 Gif Sur Yvette, France

[2] Univ Paris 11, Dept Phys, F-91405 Orsay, France

[3] THALES, Cent Rech Lab, F-91401 Orsay, France

[4] Univ Paris 11, Photophys Mol Lab, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.1389510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate Si deposition on the 6H-SiC(0001) 3x3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4x3 surface array. Such a 4x3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H-SiC(0001) system. These findings are relevant in silicon carbide oxidation. (C) 2001 American Institute of Physics.

引用

页码：767 / 769

页数：3

共 24 条

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