Identification of the 6H-SiC(0001) 3 x 3 surface reconstruction core-level shifted components

被引:24
作者
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
机构
[1] Ctr Etud Saclay, SIMA, SPCSI,DRECAM, DSM,Commissariat Energie Atom, F-91191 Gif Sur Yvette, France
[2] Univ Paris 11, Dept Phys, F-91405 Orsay, France
[3] Acad Sinica, Taipei 115, Taiwan
[4] Thomson CSF, Cent Rech Lab, F-91401 Orsay, France
关键词
semiconducting surfaces; silicon carbide; single crystal surfaces; surface relaxation and reconstruction; synchrotron radiation photoelectron spectroscopy;
D O I
10.1016/S0039-6028(00)00637-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the 6H-SiC(0001) 3 x 3 surface reconstruction by Si 2p and Cls core-level photoemission spectroscopy using synchrotron radiation providing the first identification of surface core-level shifted components. Specific spectral features at the Si 2p core level, including bulk (B) and two surface shifted (SS1 and SS2) components, show a surface reconstruction structure involving several silicon atomic planes. In comparison, the C Is core level shows no involvement of carbon atoms in the 6H-SiC(0001) 3 x 3 surface reconstruction structure. These results, obtained by an attenuation layer model, indicate that SS1 is related to the Si adatom and that SS2 is related to the Si adlayer + trimer of the 6H-SiC(0001) 3 x 3 surface reconstruction. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L691 / L696
页数:6
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