Phase field modeling of domain structures in ferroelectric thin films

Phase-field simulations were used to explore the effect of the characteristics of the Landau-Devonshire free energy and values of electrostatic and elastic interactions on the formation of different types of domain structures in ferroelectric thin films. Simulations were performed at different constant-applied electric fields and by using a cyclic continuously changing field. It is shown that the 1800 or 900 domain structures can be produced depending on the relative strength of elastic interactions and the ratio of barrier heights that determine the energy of the 1800 and 900 domain boundaries. It is shown that the applied field strength and the thickness of the dead layer can play a minor role in the transition between the 900 and 1800 domain structures. It is also demonstrated that the poling history can affect the type of the domain structure.