Molecular programming of B cell memory

被引:330
作者
McHeyzer-Williams, Michael [1 ]
Okitsu, Shinji [1 ]
Wang, Nathaniel [1 ]
McHeyzer-Williams, Louise [1 ]
机构
[1] Scripps Res Inst, Dept Immunol & Microbial Sci, La Jolla, CA 92037 USA
关键词
SUBCAPSULAR SINUS MACROPHAGES; FOLLICULAR HELPER-CELL; CLASS-SWITCH RECOMBINATION; T-CELLS; GERMINAL-CENTERS; LYMPH-NODES; PLASMA-CELL; SOMATIC HYPERMUTATION; ANTIBODY-RESPONSES; IMMUNE-RESPONSE;
D O I
10.1038/nri3128
中图分类号
R392 [医学免疫学]; Q939.91 [免疫学];
学科分类号
100102 ;
摘要
The development of high-affinity B cell memory is regulated through three separable phases, each involving antigen recognition by specific B cells and cognate T helper cells. Initially, antigen-primed B cells require cognate T cell help to gain entry into the germinal centre pathway to memory. Once in the germinal centre, B cells with variant B cell receptors must access antigens and present them to germinal centre T helper cells to enter long-lived memory B cell compartments. Following antigen recall, memory B cells require T cell help to proliferate and differentiate into plasma cells. A recent surge of information - resulting from dynamic B cell imaging in vivo and the elucidation of T follicular helper cell programmes - has reshaped the conceptual landscape surrounding the generation of memory B cells. In this Review, we integrate this new information about each phase of antigen-specific B cell development to describe the newly unravelled molecular dynamics of memory B cell programming.
引用
收藏
页码:24 / 34
页数:11
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