Internal photoemission over HfO2 and Hf(1-x)SixO2 high-k insulating barriers:: Band offset and interfacial dipole characterization

The band offsets at HfO2 and Hf(1-x)SixO2 high-k oxide interfaces with an aluminum metal gate and a silicon substrate have been characterized in detail by using internal photoemission spectroscopy. The quantitative comparison of the extracted energies on both sides of band offsets in the hafnium oxide, those in pure silicon oxide, suggests the presence of an interfacial dipole located at the HfO2/SiO2 interface, which becomes less significant by adding silicon inside the HfO2 film. Through the combination of internal photoemission and spectroscopic ellipsometry experiments, the band diagrams of Hf(1-x)SixO2 films were determined for different silicon concentrations. This study shows that Si 3s and Hf 5d states give independent contributions to the conduction band.