Mesoscopic spin Hall effect in multiprobe ballistic spin-orbit-coupled semiconductor bridges -: art. no. 075361

被引:109
作者
Nikolic, BK [1 ]
Zârbo, LP [1 ]
Souma, S [1 ]
机构
[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
关键词
D O I
10.1103/PhysRevB.72.075361
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a pure spin current, which is not accompanied by any net charge flow, in the transverse voltage probes. Its magnitude can be tuned by the Rashba spin-orbit (SO) coupling and, moreover, it is resilient to weak spin-independent scattering off impurities within the metallic diffusive regime. While the polarization vector of the spin transported through the transverse leads is not orthogonal to the plane of 2DEG, we demonstrate that only two components (out-of-plane and longitudinal) of the transverse spin current are signatures of the spin Hall effect in four-probe Rashba spin-split semiconductor nanostructures. The linear response spin Hall current, obtained from the multiprobe Landauer-Buttiker scattering formalism generalized for quantum transport of spin, is the Fermi-surface determined nonequilibrium quantity whose scaling with the 2DEG size L reveals the importance of processes occurring on the spin precession mesoscale L-SO (on which spin precesses by an angle pi)-the out-of-plane component of the transverse spin current exhibits quasioscillatory behavior for L less than or similar to L-SO (attaining the maximum value in 2DEGs of the size L-SO x L-SO), while it reaches the asymptotic value in the macroscopic regime L > L-SO. Furthermore, these values of the spin Hall current can be manipulated by the measuring geometry defined by the attached leads.
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页数:11
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[21]   Spin current and polarization in impure two-dimensional electron systems with spin-orbit coupling [J].
Mishchenko, EG ;
Shytov, AV ;
Halperin, BI .
PHYSICAL REVIEW LETTERS, 2004, 93 (22)
[22]   Dissipationless quantum spin current at room temperature [J].
Murakami, S ;
Nagaosa, N ;
Zhang, SC .
SCIENCE, 2003, 301 (5638) :1348-1351
[23]   Spin-Hall insulator [J].
Murakami, S ;
Nagaosa, N ;
Zhang, SC .
PHYSICAL REVIEW LETTERS, 2004, 93 (15) :156804-1
[24]   SU(2) non-Abelian holonomy and dissipationless spin current in semiconductors [J].
Murakami, S ;
Nagaosa, N ;
Zhang, SC .
PHYSICAL REVIEW B, 2004, 69 (23) :235206-1
[25]   Absence of vertex correction for the spin Hall effect in p-type semiconductors -: art. no. 241202 [J].
Murakami, S .
PHYSICAL REVIEW B, 2004, 69 (24) :241202-1
[26]   Decoherence of transported spin in multichannel spin-orbit-coupled spintronic devices: Scattering approach to spin-density matrix from the ballistic to the localized regime [J].
Nikolic, BK ;
Souma, S .
PHYSICAL REVIEW B, 2005, 71 (19)
[27]   Transverse spin-orbit force in the spin Hall effect in ballistic semiconductor wires -: art. no. 075335 [J].
Nikolic, BK ;
Zârbo, LP ;
Welack, S .
PHYSICAL REVIEW B, 2005, 72 (07)
[28]   Nonequilibrium spin hall accumulation in ballistic semiconductor nanostructures -: art. no. 046601 [J].
Nikolic, BK ;
Souma, S ;
Zârbo, LP ;
Sinova, J .
PHYSICAL REVIEW LETTERS, 2005, 95 (04)
[29]   Resistivity of a metal between the Boltzmann transport regime and the Anderson transition [J].
Nikolic, BK ;
Allen, PB .
PHYSICAL REVIEW B, 2001, 63 (02)
[30]  
Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335