Importance of the spin-orbit split-off band on the tunneling properties of holes through AlxGa1-xAs/GaAs and InP/InyGa1-yAs heterostructures

被引:17
作者
Ekbote, S [1 ]
Cahay, M [1 ]
Roenker, K [1 ]
机构
[1] Univ Cincinnati, Dept Elect Engn, Cincinnati, OH 45221 USA
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 24期
关键词
D O I
10.1103/PhysRevB.58.16315
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of the spin-orbit split-off band on the tunneling of holes across heterostructures is studied starting with the 6X6 Luttinger-Kohn Hamiltonian. The latter is diagonalized into 3X3 blocks (upper and lower Hamiltonians) using a unitary transformation. We consider AlxGa1-xAs/GaAs and InP/InyGa1-yAs material systems, and study the tunneling of holes through a one-dimensional delta scatterer and across abrupt potential steps. In each case, we show that the presence of the spin-orbit split-off band has a profound influence on the transmission coefficients of holes, even for holes with energy much lower than the threshold for free propagation in the spin-orbit split-off band. For the potential steps, we show that the results can be quite different with upper and lower Hamiltonians. Furthermore, we stress the importance of the spin-orbit split-off band by comparing the results with those obtained with the 4 x 4 Luttinger-Kohn Hamiltonian which neglects the importance of the spin-orbit split-off band. [S0163-1829(98)08148-X].
引用
收藏
页码:16315 / 16325
页数:11
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