Preparation and characterization of In2Se3 thin films

被引:37
作者
Bouzouita, H
Bouguila, N
Duchemin, S
Fiechter, S
Dhouib, A
机构
[1] ENIT, Lab Photovolta & Mat Semicond, Tunis 1002, Tunisia
[2] Univ Sci & Tech Languedoc, CNRS UA391, Ctr Elect Montpellier, F-34060 Montpellier, France
[3] Hahn Meitner Inst Berlin GmbH, Bereich Strablenchem, D-1000 Berlin, Germany
关键词
D O I
10.1016/S0960-1481(00)00193-2
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The spray pyrolysis conditions required preparing In2Se3 films Were optimised. The structural, optical and morphological properties of the films and their evolution are related with the variation of some preparation parameters, which are the substrate temperature and the Se/In molar concentration ratio in the solution. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:131 / 138
页数:8
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