A NEW SIMPLE TECHNIQUE TO OBTAIN IN2SE3 POLYCRYSTALLINE THIN-FILMS

In2Se3 coatings were obtained either by direct evaporation of the compound in powder form or by solid state reaction, induced by annealing, between the In and Se constituents sequentially deposited in thin film form. The films have been investigated using X-ray diffraction, scanning electron microscopy, microprobe analysis, X-ray photoelectron spectroscopy and transmission electron microscopy. The effects of the starling material (compound powder or components sequentially deposited) have been studied. For thin Se and In films sequentially deposited the effect of the variation of the In/Se atomic ratio, the annealing conditions-temperature, time, under selenium pressure or not-have been used as parameters. It is shown that thin films with a single phase and a high orientation degree can be obtained under appropriate annealing conditions, i.e. the layers sequentially deposited should be in the atomic ratio In/Se = 2/3 and they should be annealed under selenium atmosphere for 24 h at 573 K.