Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional S-doped semiconductor system

被引:41
作者
Hai, GQ [1 ]
Studart, N [1 ]
Peeters, FM [1 ]
Koenraad, PM [1 ]
Wolter, JH [1 ]
机构
[1] EINDHOVEN UNIV TECHNOL,COBRA,INTERUNIV RES INST,DEPT PHYS,NL-5600 MB EINDHOVEN,NETHERLANDS
关键词
D O I
10.1063/1.363573
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.
引用
收藏
页码:5809 / 5814
页数:6
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