Photoemission evidence of electronic stabilization of polar surfaces in K3C60

被引:84
作者
Hesper, R [1 ]
Tjeng, LH [1 ]
Heeres, A [1 ]
Sawatzky, GA [1 ]
机构
[1] Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, NL-9747 AG Groningen, Netherlands
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 23期
关键词
D O I
10.1103/PhysRevB.62.16046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed investigation of the surface electronic structure of solid K3C60 in connection with its electronic transport properties. We find that the conductivity is extremely sensitive to the K concentration of the surface layer, and that the best-conducting samples with the highest superconducting transition temperatures have surfaces with the highest density of states at the Fermi level as measured by photoemission. The C-60 ions at the surface have, however, a valence that deviates appreciably from the 3- bulk value, namely 2.5- or even 1.5-, depending on the preparation procedure. We attribute this as being the result of an electronic rather than an atomic surface reconstruction to avoid the divergence of the electrostatic potential associated with the polar (111) surface termination of K3C60. We argue that such a mixed-valence surface should always be a metal, irrespective of whether the bulk is a metal or a Mott-Hubbard insulator.
引用
收藏
页码:16046 / 16055
页数:10
相关论文
共 55 条
[21]   NO ON COO(111)/CO(0001) - HYDROXYL ASSISTED ADSORPTION [J].
HASSEL, M ;
FREUND, HJ .
SURFACE SCIENCE, 1995, 325 (1-2) :163-168
[22]   INFLUENCE OF MONO-VALENT IONS ON THE CRYSTAL HABIT OF OXIDES AND CHALCOGENIDES [J].
HEIKENS, HH ;
VANBRUGGEN, CF ;
HAAS, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :399-403
[23]   THERMAL FACETING OF (110) AND (111) SURFACES OF MGO [J].
HENRICH, VE .
SURFACE SCIENCE, 1976, 57 (01) :385-392
[24]   Strongly reduced band gap in a correlated insulator in close proximity to a metal [J].
Hesper, R ;
Tjeng, LH ;
Sawatzky, GA .
EUROPHYSICS LETTERS, 1997, 40 (02) :177-182
[25]   FRACTAL MODEL OF SUPERSTRUCTURES ON AGBR(111) [J].
HOFMEISTER, H ;
GROSSE, S ;
GERTH, G ;
HAEFKE, H .
PHYSICAL REVIEW B, 1994, 49 (11) :7646-7653
[26]   Charge transfer and doping-dependent hybridization of C60 on noble metals [J].
Hoogenboom, BW ;
Hesper, R ;
Tjeng, LH ;
Sawatzky, GA .
PHYSICAL REVIEW B, 1998, 57 (19) :11939-11942
[27]   DETERMINATION OF SUPERCONDUCTING AND NORMAL-STATE PARAMETERS OF SINGLE-CRYSTAL K3C60 [J].
HOU, JG ;
CRESPI, VH ;
XIANG, XD ;
VAREKA, WA ;
BRICENO, G ;
ZETTL, A ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1993, 86 (10) :643-646
[28]  
Hufner S., 1996, PHOTOELECTRON SPECTR
[29]   Spatially resolved electron tunneling spectroscopy on single crystalline Rb3C60 [J].
Jess, P ;
Hubler, U ;
Behler, S ;
ThommenGeiser, V ;
Lang, HP .
SYNTHETIC METALS, 1996, 77 (1-3) :201-203
[30]   Mott-Hubbard-like behavior of the energy gap of A(4)C(60) (A = Na, K, Rb, Cs) and Na10C60 [J].
Knupfer, M ;
Fink, J .
PHYSICAL REVIEW LETTERS, 1997, 79 (14) :2714-2717