Theoretical and experimental study of 4H-SiC junction edge termination

被引：43

作者：

Li, XQ ^{[1
]}

Tone, K ^{[1
]}

Cao, LH ^{[1
]}

Alexandrov, P ^{[1
]}

Fursin, L ^{[1
]}

Zhao, JH ^{[1
]}

机构：

[1] Rutgers State Univ, SiCLAB, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

diode; epitaxial guard ring; GTO; modified junction termination extension;

D O I：

10.4028/www.scientific.net/MSF.338-342.1375

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper focuses on the study of 4H-SiC junction edge termination by way of numerical simulation using ISE-TCAD software. A modified junction termination extension, which uses a single step ion implantation and multiple dry etches, is presented. Simulation results show that near ideal breakdown voltage can be reached by a practical two-step dry etch. The breakdown voltages of our pin diodes with a 13 mum-thick 9.7x10(15)cm(-3)-doped base, a two-step MITE of etched depths of 0.4 mum and 0.44 mum and 0.7 mum-deep 2.0x10(18)cm(-3)-doped junction, achieve 1680V, which approaches 96% of the breakdown voltage of corresponding ideal parallel junction. Guard rings formed by an epitaxial layer instead of ion implantation for GTO edge termination is studied. Devices with these two protection techniques are fabricated and the experimental results are reported.

引用

页码：1375 / 1378

页数：4