Periphery protection for silicon carbide devices: State of the art and simulation

被引：20

作者：

Planson, D ^{[1
]}

Locatelli, ML ^{[1
]}

Ortolland, S ^{[1
]}

Chante, JP ^{[1
]}

Mitlehner, H ^{[1
]}

Stephani, D ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,D-91052 ERLANGEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

high voltage capability; semi-insulating surface; silicon carbide;

D O I：

10.1016/S0921-5107(96)01983-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) is well known for its large potentiality for power device applications. SiC presents a high critical electric field, allowing small dimensions and relatively high doping levels, favorable for reduced power losses in the on-state together with high blocking voltage capability. SIC has a wide band-gap, inducing very low intrinsic carrier concentrations even at high temperature. and consequently allows very low leakage currents and off-state pou sr losses. The present paper focuses on problems related to the high voltage capability of SiC components. After dealing with the bulk breakdown voltage of a SiC semi-infinite parallel-plane abrupt junction, a short review of the methods allowing the potential distribution spreading near the periphery of the real junction is given. Some methods have been implemented and the edge-termination protection has been optimized by the way of numerical simulation. This includes equipotential rings, junction termination extension as planar protections, and MESA as an etched-contour periphery. Examples of realizations are given, and electrical characteristics are presented. They show a better capability of the junction termination extension periphery over the MESA technique to reach a 1500 V-blocking voltage objective. (C) 1997 Elsevier Science S.A.

引用

页码：210 / 217

页数：8

共 15 条

[1] BORON AND ALUMINUM IMPLANTATION IN ALPHA-SIC [J].