BORON AND ALUMINUM IMPLANTATION IN ALPHA-SIC

被引：11

作者：

AHMED, S ^{[1
]}

BARBERO, CJ ^{[1
]}

SIGMON, TW ^{[1
]}

ERICKSON, JW ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.113076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the comparison of experimental implantation profiles in 6Halpha-silicon carbide (SiC) with the theoretical results obtained using the widely used TRIM profile simulator. Our results for the projected range of Al and B implanted into this material agree well with those predicted by TRIM, in contrast to previously published results. Profiles for 40-250 keV Al and B implantation, off-crystal axis to minimize channeling in SiC, are obtained using secondary ion mass spectroscopy. The Pearson I and VI theoretical profiles, constructed using the first four moments of the distribution generated by the TRIM simulator, are then compared to the experimental ones.

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页码：67 / 69

页数：3

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