RANGE PARAMETERS OF AU AND CS IMPLANTED INTO BN AND SIC FILMS

Sputtering deposited BN films and directly evaporated SiC films were implanted with Au and Cs in the 20 to 250 keV energy range. Depth profiles of the implanted ions were obtained using the Rutherford backscattering technique. The experimental profiles are compared to the theoretical predictions based on the Ziegler-Biersack-Littmark (ZBL) calculations via the TRIM code. As for previous measured ranges in light substrates, our results also show deviations between experiment and theory. Our data are compared with previous results for light targets as well as with calculations involving a modified version of the TRIM code, incorporating inelastic effects in the nuclear stopping regime. Finally all the data are presented in the reduced range-energy (rho - epsilon) coordinates and compared with the empirical universal relation for ranges in Si derived by Kalbitzer and Oetzmann [Radiat. Eff. 47 (1980) 57].