RANGE PROFILES OF 10 TO 390 KEV IONS (29-LESS-THAN-OR-EQUAL-TO-Z1-LESS-THAN-OR-EQUAL-TO-83) IMPLANTED INTO AMORPHOUS-SILICON

被引：35

作者：

FICHTNER, PFP ^{[1
]}

BEHAR, M ^{[1
]}

OLIVIERI, CA ^{[1
]}

LIVI, RP ^{[1
]}

DESOUZA, JP ^{[1
]}

ZAWISLAK, FC ^{[1
]}

BIERSACK, JP ^{[1
]}

FINK, D ^{[1
]}

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 28卷 / 04期

关键词：

D O I：

10.1016/0168-583X(87)90491-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：481 / 487

页数：7

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