RANGE AND RANGE STRAGGLING OF 15 TO 350 KEV GA-69 IN AMORPHOUS-SILICON

被引：6

作者：

BEHAR, M

BIERSACK, JP

FICHTNER, PFP

FINK, D

LEITE, CVD

OLIVIERI, CA

PATNAIK, BK

DESOUZA, JP

ZAWISLAK, FC

机构：

[1] PONTIFICIA UNIV CATOLICA RIO DE JANEIRO,DEPT FIS,BR-20000 RIO DE JANEIRO,RJ,BRAZIL

[2] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

来源：

RADIATION EFFECTS LETTERS | 1984年 / 85卷 / 03期

关键词：

D O I：

10.1080/01422448408210073

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：117 / 122

页数：6

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