DEPTH DISTRIBUTION OF GALLIUM IONS IMPLANTED INTO SILICON-CRYSTALS

被引：11

作者：

DEARNALEY, G ^{[1
]}

GARD, GA ^{[1
]}

TEMPLE, W ^{[1
]}

WILKINS, MA ^{[1
]}

机构：

[1] ATOM ENERGY RES ESTABL,HARWELL,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 01期

关键词：

D O I：

10.1063/1.88270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：17 / 18

页数：2

共 12 条

[1] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J].

BLOOD, P ;

DEARNALEY, G ;

WILKINS, MA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5123-5128

[2] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :943-&

[3] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS [J].

DEARNALEY, G ;

FREEMAN, JH ;

GARD, GA ;

WILKINS, MA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :587-+

[4]

DEARNALEY G, 1971, 1970 P C ION IMPL SE, P439

[5]

FREEMAN JH, 1974, P C ION IMPLANTATION

[6] ENHANCED DIFFUSION AND LATTICE LOCATION OF INDIUM AND GALLIUM IMPLANTED IN SILICON [J].

GAMO, K ;

IWAKI, M ;

MASUDA, K ;

NAMBA, S ;

ISHIHARA, S ;

KIMURA, I ;

MITCHELL, IV ;

ILIC, G ;

WHITTON, JL ;

DAVIES, JA .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) :735-741

[7] IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON [J].

KLEINFEL.WJ ;

JOHNSON, WS ;

GIBBONS, JF .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :597-&

[8]

Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[9] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J].

MAZEY, DJ ;

NELSON, RS ;

BARNES, RS .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1145-&

[10] ENHANCED DIFFUSION DURING IMPLANTATION OF ARSENIC IN SILICON [J].

SCHWETTMANN, FN .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :570-572

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