Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

We report the room temperature operation of 8-12 mu m InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 mu m was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2x10(6) cmHz(1/2)/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. (C) 1998 American Institute of Physics.