8-13 MU-M INASSB HETEROJUNCTION PHOTODIODE OPERATING AT NEAR ROOM-TEMPERATURE

p(+)-InSb/pi-InAs1-xSbx/n(+)-InSb heterojunction photodiodes operating at near room temperature in the 8-13 mu m region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 mu m has been observed at 300 K with an x approximate to 0.85 sample. The voltage responsivity-area product of 3 x 10(-5) V cm(2)/W has been obtained at 300 K for the lambda = 10.6 mu m optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of approximate to 1.5 x 10(8) cm Hz(1/2)/W. (C) 1995 American Institute of Physics.