PHOTOCONDUCTANCE MEASUREMENTS ON INTISB/INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：39

作者：

STAVETEIG, PT

CHOI, YH

LABEYRIE, G

BIGAN, E

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 mu m at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3x10(8) Hz(1/2), W-1 at 7 mu m wavelength.

引用

页码：460 / 462

页数：3

共 11 条

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