EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES

被引：48

作者：

KURTZ, SR

OSBOURN, GC

BIEFELD, RM

DAWSON, LR

STEIN, HJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：831 / 833

页数：3

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共 13 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[2] THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 255 - 263
[3] THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD
BIEFELD, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 392 - 399
[4] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS
BUBULAC, LO
ANDREWS, AM
GERTNER, ER
CHEUNG, DT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 734 - 736
[5] CHAING PK, 1985, APPL PHYS LETT, V46, P383
[6] BACKSIDE-ILLUMINATED INAS1-XSBX-INAS NARROW-BAND PHOTODETECTORS
CHEUNG, DT
ANDREWS, AM
GERTNER, ER
WILLIAMS, GM
CLARKE, JE
PASKO, JG
LONGO, JT
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 587 - 589
[7] DAWSON LR, IN PRESS 14TH P INT
[8] DAWSON LR, UNPUB
[9] BAND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM-WELLS
NELSON, DF
MILLER, RC
KLEINMAN, DA
[J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7770 - 7773
[10] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS
OSBOURN, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 176 - 178