THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD

被引：29

作者：

BIEFELD, RM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90329-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：392 / 399

页数：8

共 24 条

[1]

BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302

[2] THE PREPARATION OF DEVICE QUALITY GALLIUM-PHOSPHIDE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :382-388

[3] PREPARATION OF III-V COMPOUND SEMICONDUCTORS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM .

INDUSTRIAL & ENGINEERING CHEMISTRY PRODUCT RESEARCH AND DEVELOPMENT, 1982, 21 (04) :525-528

[4]

BIEFELD RM, UNPUB J ELECTRON MAT

[5]

BIEFELD RM, 1985, J CRYST GROWTH, V75, P255

[6] GAAS1-XSBX GROWTH BY OMVPE [J].

CHERNG, MJ ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813

[7] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD [J].

CHIANG, PK ;

BEDAIR, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2422-2426

[8] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS [J].

FUKUI, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L53-L56

[9]

HARRISON BC, 1962, INORGAN CHEM, V1

[10] FRACTURE OF BRITTLE EPITAXIAL FILMS UNDER INFLUENCE OF MISFIT STRESS [J].

MATTHEWS, JW ;

KLOKHOLM, E .

MATERIALS RESEARCH BULLETIN, 1972, 7 (03) :213-&

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